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| SEMICONDUCTOR TECHNICAL DATA VCO. FEATURES KDV350E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK Low Series Resistance : rS=0.50 Small Package. (ESC Package) (Max.) C 1 E 2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 15 150 -55 150 UNIT V D F B A 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance VR IR C1V C4V K rS ) TEST CONDITION IR=1 A VR=15V VR=1V, f=1MHz VR=4V, f=1MHz C1V/C4V, f=1MHz VR=1V, f=470MHz MIN. 15 15.0 5.3 2.8 TYP. MAX. 10 17.5 6.3 0.5 UNIT V nA pF SYMBOL Marking Type Name UK 2000. 3. 7 Revision No : 0 1/2 KDV350E I R - VR 10 REVERSE CURRENT I R (A) -11 CR - V 25 CAPACITANCE C (pF) 20 15 10 5 0 f=1MHz 10 -12 10 -13 0 4 8 12 16 10 -1 1.0 REVERSE VOLTAGE V R (V) 10 REVERSE VOLTAGE VR (V) rs 0.4 SERIES RESISTANCE r s () VR f=1MHz 0.3 0.2 0.1 0 0.5 1.0 3.0 5.0 10 30 50 REVERSE VOLTAGE VR (V) 2000. 3. 7 Revision No : 0 2/2 |
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